Feature:
1. High performance InGaP HBT MMICamplifier utilize a Darlington configuration with an active bias network
2. The active bias network provides stable current over temperature and process Beta variations
3. Designed to run directly from a 5V supply, does not require a dropping resistor as compared to typical Darlington amplifiers
4. The product is designed for high linearity 5V gain block applications that require small size and minimal external components
5. It is internally matched to 50 Ω
Specification:
Features:
High performance InGaP HBT MMIC amplifier utilize a Darlington configuration with an active bias network.
The active bias network provides stable current over temperature and process Beta variations.
Designed to run directly from a 5V supply, does not require a dropping resistor as compared to typical Darlington amplifiers.
The product is designed for high linearity 5V gain block applications that require small size and minimal external components.
It is internally matched to 50 Ω.
Specifications:
Power supply voltage: typical +5V (typical current value 75mA)
Gain: typical value 20dB @2G, input output impedance: 50 ohms
Maximum output power: P1db 20dBm (@2ghz
Input signal: +10dBm input signal has been distortion)
Bandwidth: 0.05-6Ghz (different frequencies of gain are different)
Noise coefficient: 4.1dB @1Ghz
Size: 3.2 x2.3cm/1.3 x 0.9 inch
Weight: 5g
File download:
http://pan.baidu.com/s/1bpCmfuf(Password:hcow)
Applications:
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Terminals
Package Included:
1 x RF Amplifier
Note:
Please note that the new type and old type of this product will be sent randomly, and make sure you will not mind before ordering.