FET TypeN-ChannelTechnologyMOSFET (Metal Oxide)Drain to Source Voltage (Vdss)30VCurrent
- Continuous Drain (Id) @ 25°C21A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10VRds On (Max) @ Id, Vgs3.9 mOhm @ 35A, 10VVgs(th) (Max) @ Id2.5V @ 250µAGate Charge (Qg) (Max) @ Vgs118nC @ 10VVgs (Max)±20VInput Capacitance (Ciss) (Max) @ Vds5160pF @ 15VFET Feature-Power Dissipation (Max)160W (Tc)Operating Temperature-55°C ~ 175°C (TJ)Mounting TypeSurface MountSupplier Device PackageTO-252AAPackage / CaseTO-252-3, DPak (2 Leads + Tab), SC-63